Abstract
ABSTRACTTemperature-time profiles obtained by an optical pyrometer and a mechanically contacted thermocouple are first presented it appears that the thermocouple response is sensitive to the pressure in the processing chamber. The authors suggest that, in vacuum, the thermocouple is thermally isolated from the wafer, until the temperature is high enough for thermal radiation exchanges to occur. Experimental evidence of the influence of thermal history, and of gas pressure and flow, on temperature drop at periphery of the wafer is then given.
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