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Abstract
For microwave BJTs, the influence is experimentally studied of different surface-cleaning processes on the Al/Mo-to-Si contact resistance and BJT parameters. Two processes are identified as optimal. One of them includes preliminary H2O2–NH4OH–H2O treatment, vacuum furnace annealing, H2O2–NH4OH–H2O cleaning, and treatment with 1% hydrofluoric acid. The other includes rapid light annealing followed by treatment with 1% hydrofluoric acid. It is concluded that the resultant silicon-surface restructuring provides a lower contact resistance, more intimate metal–semiconductor contact, and better BJT parameter values.
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