Silicon surface modification by quasistationary compression plasma flow

Abstract

Modification of silicon single crystal surface by the action of nitrogen quasistationary compression plasma flow (CPF) generated by magnetoplasma compressor is studied. It was found that during single pulse surface treatment regular fracture features are obtained on the Si (111) and Si (100) surface in the target central part. Some of these regular structures can become free from the underlying bulk, formed as blocks ejected from the surface. Also, oriented silicon periodic structures are produced in the target periphery part. These surface phenomena are results of specific conditions during CPF interaction with silicon surface. High plasma flow energy density, large dynamic pressure, thermodynamic parameters gradients and induced magnetic field on treated surface cause rapid heating and melting of surface layer, as well as surface fracturing, long existence of molten layer and fast cooling and recrystalisation.