Abstract
We demonstrated surface cleaning using photoexcited fluorine gas diluted with hydrogen . We found that cleaning selectively removed native Si oxide from thermal oxide without etching the bulk Si. The dangling bonds on the Si surface after cleaning were almost exclusively terminated with hydrogen atoms, with few bonds to fluorine. cleaning effectively flattened the Si surface. We applied cleaning to Si epitaxy. This cleaning allowed us to obtain single‐crystal Si film with preannealing temperatures as low as 600°C. This temperature is lower than that of conventional methods by ca. 150°C. cleaning is a good dry precleaning method for various processes which include Si epitaxy.
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