Abstract
Silicon wafer cleaning by wet etching in model equipment meeting requirements for a closed manufacturing system is considered. Theoretical grounds for the new production technology, including chemical treatment, rinsing in water, and drying in a single process, are discussed. It is shown that the cleaning efficiency is improved if a heated gas (such as nitrogen) passes through the etchant, causing the wafers to vibrate, rotate in the horizontal plane, or reciprocate in the vertical plane. Also, the heated gas exerts a cavitation effect on the wafer surface. The degree of surface contamination after chemical etching, rinsing, and drying is reported.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
