Abstract
ABSTRACTMicrowave plasma surface cleaning opens an interesting possibility for thin layer preparation. We have investigated the effect of hydrogen and NF3plasma induced by a microwave source. The sample is exposed in the downstream region achieved by a plenum. The cleaning process has been applied to a silicon (100) substrate. The cleaned surface has been analyzed by different methods of investigation: HRTEM, XPS, Therma-Wave and MOS capacitor (C-V) characteristics. The HRTEM observations show a defect-free interface, between the hydrogen cleaned silicon surface and the thermal oxide grown immediately after cleaning. In addition, the silicon crystalline network is not perturbed by induced defects. This was confirmed by Thermal Wave measurements which gave an excellent surface qualification.
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