Silicon strain sensitive unijunction transistor with controlling p–n-junction

Abstract

Abstract Theoretical studies of a silicon integral pressure transducer characteristics are made. The sensitive element of the transducer is a strain sensitive controlled unijunction transistor (SSCUJT) with controlling p–n-junction. The transistor has horizontal structure and could be considered as combination of p–n–p bipolar and n + –p–n + unijunction transistors. The unijunction transistor is integrated in the planar side of the silicon square-shaped diaphragm with two rigid islands (the EE-type diaphragm). Using Green’s function formalism characteristics of the pressure transducer are investigated and the optimal topology of the sensitive element is determined. It has been shown that high sensitive pressure sensors with frequency output could be created on base of the unijunction transistors.