Abstract
We have developed two novel methods of fabricating very small Si single-electron transistors (SETs), called PAttern-Dependent OXidation (PADOX) and Vertical PAttern-Dependent OXidation (V-PADOX). These methods exploit special phenomena that occur when small Si structures on SiO/sub 2/ are thermally oxidized. Since the size of the resultant Si island of the SET is about 10 nm, we can observe the conductance oscillations in the SET even at room temperature. The controllability and reproducibility of these methods are excellent because of the stability of the thermal oxidation process. We are using PADOX and V-PADOX to integrate single-electron devices (SEDs)for sophisticated functions. We have fabricated and tested several kinds of memory and logic devices, This paper also describes applications of multi-input gate SETs to multiple-valued logic circuits.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
