Abstract
We present the fabrication and preliminary electrical characteristics of a parametron cell, consisting of two conducting islands separated by a very short nanowire, with an integrated capacitively coupled electrometer and gates, fabricated using a trench-isolated structure on silicon-on-insulator material using high-resolution electron beam lithography and reactive-ion-etching. The structure is modified in comparison to previously presented devices, such that both the parametron island sizes and the inter-island separation have been reduced in order that single-electron effects influence the polarisation of the cell. This polarisation is used in order to achieve classical computation by the application of appropriate pulses on the gates.
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