Silicon single-electron devices

Abstract

Silicon single-electron transistors (SETs) were fabricated by using very flat silicon-on-insulator (SOI) substrates, high resolution electron beam (EB) lithography and etching techniques. In addition, we developed a special fabrication method called pattern-dependent oxidation with which a one-dimensional Si wire can be converted into a small Si island with a tunnelling barrier at each end. Since the Si island is around 10 nm, we could observe the conductance oscillation in the SET even at room temperature. The controllability and reproducibility of this method were confirmed through analysing the effects of size on electrical characteristics. We were also able to observe single-electron memory effects by using these novel techniques.