Abstract
Intrinsic resistivity of any semiconductor silicon layer strongly depends on dopants and impurities concentrations. Structural properties, treating, coating, finishing etc. affect dynamic resistance behaviour of a given p-n junction in a wafer. It is important for massively used photovoltaics, optoelectronics, microelectronics, and other solid-state electronics. In this work, efficient, universally applicable methodology is presented to investigate silicon resistive parameters. First, the silicon band gap models are studied. Influence of electrical resistivity on resistances and complex impedance parts is investigated. Dynamic iterative numerical modelling and simulations combined with sparse-matrix experimental measurements lead to extrapolated behaviours of these resistive parameters. All parameters are investigated within acceptable practical interval up to extremals.
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