Silicon PV devices based on a single step for doping, anti-reflection and surface passivation

Abstract

A simplified process for photovoltaic device fabrication is explored. The simplified process incorporates a single step wherein a thin film of phosphorus doped spin on dopant (SOD) serves as dopant source, anti-reflection coating (ARC) and a surface passivation layer. Detailed fabrication and photovoltaic device characterization results are presented. Device results for solar cells fabricated on low minority carrier lifetime Cz-substrates and high minority carrier lifetime Fz (polished and chemically textured substrates) are presented. Using this simplified process, photovoltaic devices with conversion efficiency of over 15% on c-Si wafers have been demonstrated. Further improvements in efficiency are possible by reduction in series resistance, control of surface dopant concentration and a rear passivated electrode configuration.