Abstract
The effects of argon excimer laser irradiation on silicon nitride films deposited on GaAs substrates have been investigated. The precipitation of crystalline silicon induced by the irradiation is detected in the surface layer of silicon nitride with X-ray photoelectron and Raman spectroscopy. The silicon precipitation mechanism is basically a photochemical breaking of Si-N bonds. From the dependence of the silicon precipitation on the film thickness, it is shown that temperature above 1300°C is an additional factor necessary for precipitation.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
