Abstract
The performance of Silicon Photomultipliers (SiPMs) from several vendors are characterized before and after exposure of up to 1010 neutron/cm2 dosage. Collectively, we firmly established that the typical orders of magnitude increase in dark current upon neutron irradiation can be lowered substantially after processing them with a thermal annealing procedure, and single-photon detection are to some extent recovered at room temperature. Moreover, we found no significant difference on neutron damaged behavior when SiPMs are irradiated at room temperature or in liquid nitrogen.
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