Abstract
Silicon Photomultipliers (Si-PM) consist of an array of semiconductor photodiodes joint on the common substrate and operating in limited geiger mode. A new generation of Si-PM is currently under test in INFN Rome Tor Vergata facilities: they consist of a 5625 element, 3 * 3 mm 2 array with an improved light response. These elements have been characterized. Furthermore, a functional model of the Si-PM has been developed to be used in a VLSI development of front-end electronics.
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