Abstract
Silicon photodiodes with a grid-structured p-region were studied. Analytical expressions for the capacitance of such photodiodes were derived. The influence of the cell sizes and diffusion length of minority carriers on the sensitivity of the silicon grid photodiode was analyzed in a spectral range of 0.6–1.0 μm. The experimental characteristics of photodiodes with a grid p-n junction with cell sizes of 50 and 110 μm are given. The factors controlling the spectral-characteristic features of these photodiodes are discussed.
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