Abstract
A large-area silicon diode is used as a fluorescence detector for extended x-ray absorption fine-structure (EXAFS) measurements. A direct comparison of this diode detector relative to a gas ionization fluorescence detector is made. Advantages of the diode detector include: higher signal for a given photon flux (due to higher quantum efficiency), vacuum and cryogenic compatibility, freedom from microphonic noise, good linearity, extremely wide dynamic range, operation without high voltage or gas connections, very simple electronics, and low cost. A brief comparison with other detection methods for fluorescence EXAFS is given. Use of photodiodes for transmission EXAFS is discussed.
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