Abstract
The recombination properties of silicon passivated by insulating films of erbium oxide (Er2O3) have been studied. After deposition of an oxide film, the effective lifetime of nonequilibrium charge carriers, measured by method of nonstationary photoconductivity relaxation, increased by a factor of two to three as compared to the initial value. The rates of the surface recombination of charge carriers at the silicon-oxide interface have been determined. The insulating films of erbium oxide are promising passivating coatings for siliconbased devices and integrations.
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