Abstract
Planar optical waveguides on p-type Si wafers have been fabricated by a photo-induced deposition process. Silicon oxynitride was deposited using a gaseous mixture of SiH4 (2% in Ar), NH3 and N2O under 253.7 nm UV radiation. The oxynitride composition was varied by changing N2O: ( N2O+NH3) ratio while keeping N2O+NH3 and SiH4 flow rates constant. The refractive index varied from 1.46 to 1.95. The optical energy gap increased from 4.8 to 5.7 as the flow rate ratio varied from 0 to 0.25. Si–N bond shifts to higher energy owing to the incorporation of oxygen. A planar waveguide structure was fabricated using thermally grown SiO2 buffer layer of 1.1 µ m thickness. The loss was estimated to be 1.1 dB/cm for TE0 mode at 632.8 nm. The accuracy of measurements is 0.02 dB/cm.
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