Abstract
Products grown on a wire cathode by negative corona discharge in air containing a small amount of dimethylpolysiloxane vapor at atomospheric pressure were studied. After discharge for 120 minutes in dry air containing DMPS vapor, growth of amorphous silicon oxide projections and thin film was found on the tungsten wire cathode. The growth of the clusters of projections on the wire cathode occurred at certain intervals, and the location of the clusters corresponded to the figure of corona luminescence and the distribution of discharge current. The silicon oxide grown by negative discharge contained more OH and less oxygen than that grown by positive discharge. The growth mechanism of silicon oxide is explained as the plasma oxidation of DMPS vapor.
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