Abstract
Transparent silicon oxide thin films were deposited on polyethylene terephthalate substrates by means of reactive sputtering in oxygen and their gas barrier properties were evaluated. The SiO x film sputtered in 10% oxygen/90% argon mixture of inlet gases showed the lowest oxygen transmission rate, and this rate increased with an increase of inlet oxygen concentration. In addition, the oxygen contents of SiO x films increases rapidly within the range of small value of the inlet oxygen gas concentration (0–10%), and gently for oxygen gas concentration larger than 10%. The SiO x films sputtered at high oxygen concentration had more micro-defects than the films prepared at low oxygen concentration. The annealing at 120 °C in vacuum improved the gas barrier properties of the SiO x films sputtered at high oxygen concentration.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.