Abstract
Transparent silicon oxide thin films were deposited on polyethylene terephthalate substrates by means of reactive sputtering in oxygen and their gas barrier properties were evaluated. The SiO x film sputtered in 10% oxygen/90% argon mixture of inlet gases showed the lowest oxygen transmission rate, and this rate increased with an increase of inlet oxygen concentration. In addition, the oxygen contents of SiO x films increases rapidly within the range of small value of the inlet oxygen gas concentration (0–10%), and gently for oxygen gas concentration larger than 10%. The SiO x films sputtered at high oxygen concentration had more micro-defects than the films prepared at low oxygen concentration. The annealing at 120 °C in vacuum improved the gas barrier properties of the SiO x films sputtered at high oxygen concentration.
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