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Abstract
Abstract Silicon oxide films were deposited by high-working-pressure plasma-enhanced chemical vapor deposition using hexamethyldisiloxane and O 2 /He plasma as the precursor and the reactant, respectively. As the O 2 flow rate increased during the process, the plasma density of O 2 and He decreased due to reduction in the partial pressure of He, which affected the composition of O/Si in the silicon oxide films. Consequently, we found out that the compositional ratio of SiO 2 /SiO could be modulated by O 2 flow conditions during the high-working-pressure plasma-enhanced chemical vapor deposition process. Additionally, it was observed that the water vapor transmission rate reduced with an increase in the O 2 flow rate because of a compositional change in the silicon oxide films.
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