Abstract
Silicon oxide films (SiO x (0≲ x≲2)) were deposited onto Inconel 617 alloy for the purpose of corrosion protection in an impure helium environment. The protective behaviour of the deposited films was examined as a function of their chemical composition. The hypostoichiometric SiO x ( x < 2) coatings showed poor protective effects. Rather, they enhanced carburization of the Inconel 617 substrate. This is because the interdiffusion of silicon and nickel is faster than the oxidation of SiO x to form protective SiO 2. In the helium environment used, the rate of supply of oxygen was quite low. Stoichiometric SiO 2 coatings, however, showed good protective qualities. They protected the Inconel 617 substrate from carburization and from selective oxidation at 1170 and 1270 K for 200 h. However, some deterioration in the protective effect is expected for longer exposure to this environment at 1270 K.
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