Silicon–Organic Hybrid Tunable Fabry–Perot Filter for Electro-Optic Modulation

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Recently, electro-optic integrated photonic elements have attracted considerable interest owing to their widespread application in optical communication and signal processing. The strong electro-optical properties and the complementary metal–oxide semiconductor (CMOS) technology compatibility of silicon–organic hybrid structures makes them promising photonic platforms. This study investigated a novel implementation of a high-speed electrically tuned bandpass optical filter using finite-difference time-domain and eigenmode expansion numerical methods. The proposed device was based on a Fabry–Perot cavity and was realized via an electro-optic organic molecular glass filled slot waveguide with Bragg gratings. Furthermore, the calculation considered the plasma dispersion effect, free-carrier absorption in the silicon component of the slot waveguide for different applied voltages, and doping profiles corresponding to ion implantation. It is shown that the spatial distribution of charge carrier density formed by the surface states accumulation/depletion layers has a significant effect on the optical properties of the slot waveguide. Lithographic distortions in the geometry of the proposed structures during fabrication were also considered. Therefore, this paper presents an optical filter designed for fabrication using CMOS-compatible processes on silicon-on-insulator wafers. The filter produced a 3 nm tunable range for a 10 V bias voltage swing, a 0.3 nm full width at half maximum (FWHM) passband with a center at 1550 nm at zero bias voltage, and a 12.5 nm free spectral range with a 27 dB extinction ratio. The proposed device outperforms many narrow passband analogs in terms of sensitivity (tunability: 0.3 nm/V) and can be applied extensively in the fields of optical communications and photonic spectral signal processing.