Silicon optical sensors fabricated through masked ion implantation

Abstract

The characteristics of masked ion-implanted n +-p-p + and p +-n-n + single-crystalline optical sensors are presented. The distinctive feature of the large area devices developed is that their front n +-p and p +-n junctions were formed by ion implantation of phosphorus ( 31P +) into p-wafers and of boron ( 11B +) into n-wafers, respectively, through a thermally-grown silicon dioxide (SiO 2) layer of variable thickness. The dependences of electro-optical device characteristics (quantum efficiency, peak responsivity, optical bandwidth, etc.) on implantation parameters (oxide thickness, implant energy E and dose Q) are presented Emphasis is laid on the peculiarities of the relative spectral response of developed large area sensors.