Abstract
Silicon wafer and quartz have been successfully bonded together by a two-step thermal treatment process. SIMS measurements shows that after molecular surface activated solvent treatment, the amount of OH on the silicon or quartz surface, which is essential to the first step (low-temperature) bonding strength, is one order of magnitude higher than that on the original silicon or quartz surface. After a high-temperature (850–1250°C) solid-state diffusion process, the bonding strength between silicon and quartz is greatly increased to 150–185 kg/cm2. The material and electrical properties of the silicon on quartz substrate compares favourably with those of the bulk silicon wafer.
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