Abstract
Oxygen and nitrogen ions were implanted at 150 keV and 200 keV in silicon to form buried insulating layers for silicon-on-insulator structures. Rutherford backscattering and Raman scattering measurements were performed to investigate the crystallinity and residual stress of the top silicon layers. Single crystalline silicon layers on buried insulating layers were found to have residual stresses of 0.7–2.0 kbar after annealing at 1200–1300° C for 2–6 h.
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