Abstract
Gires–Tournois interferometers (GTIs) based on deep-etched silicon-air Bragg mirrors and on optical quality dicing of silicon are reported. Broadband reflectivity of the deep-etched Bragg mirrors allows operation on a wavelength range exceeding the C Band window. The waveguided in-plane configuration of the devices allows interferometer lengths that are not typically achievable on chips using out-of-plane designs (e.g., <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$L>1~{\rm mm}$</tex></formula> for a 25-GHz free spectral range). Optical characterization of GTIs having two different free spectral ranges (i.e., 25 and 100 GHz) yield off-resonance insertion losses below 2 dB and polarization-dependant losses (PDL) below 1 dB. Insertion losses and PDL are, however, more important near the resonance wavelengths, reaching, respectively, 15 and 5 dB. Calculations show that the reported devices could be useful for Michelson-GTI bandpass filters, such as optical interleavers.
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