Silicon Nitride Prepared by the SiH4-NH3 Reaction with Catalysts

Abstract

The application of catalysts to chemical vapor deposition process to activate reactive species is shown effective in improving electrical properties of Si-Si3-N4 systems. NFB of the Si-Si3-N4 system prepared by the catalytic method is about one tenth of NFB of those prepared by the conventional method. The catalysts of NiO and Pt are applied to the ammonia and silane respectively. The catalysis seems to be effective to reduce the deposition temperature by about 100°C. The density of the interface states is about 1×1011 cm-2 and the peak energy levels of donor and acceptor states are 0.43 eV and -0.47 eV respectively. Infection type hysteresis loops are always observed in the inversion region of both p- and n-type samples at a low temperature. The hysteresis is proportional to the film thickness and is independent of the preliminary treatments.