Abstract
Silicon nitride photonics is on the rise owing to the broadband nature of the material, allowing applications of biophotonics, tele/datacom, optical signal processing and sensing, from visible, through near to mid-infrared wavelengths. In this paper, a review of the state of the art of silicon nitride strip waveguide platforms is provided, alongside the experimental results on the development of a versatile 300 nm guiding film height silicon nitride platform.
Highlights
Despite many materials being amenable to producing photonic integrated circuits (PICs), only a few have been employed to mirror the path of the semiconductors electronics industry and evolved into an eco-system of foundries, software suppliers, design houses and fabless companies [1,2].The material systems for which generic processes and offering access through multi-project wafer (MPW) runs [3] have been developed are Silicon on Insulator (SOI) [4], Indium Phosphide [5] and Silicon Nitride [6]
A table of the available building blocks for the different foundries supplying generic processes through multi-project wafer (MPW) runs is given at the bottom of Dielectric based photonic technology started with the development of components in the visible wavelength range, applied to build optical sensors [13]
We report on our progress on a moderate confinement Si3 N4 /SiO2 waveguide platform amenable for biophotonics, tele/datacom and sensing applications from the VIS to the long
Summary
Despite many materials being amenable to producing photonic integrated circuits (PICs), only a few have been employed to mirror the path of the semiconductors electronics industry and evolved into an eco-system of foundries, software suppliers, design houses and fabless companies [1,2]. Dielectric based photonic technology started with the development of components in the visible wavelength range, applied to build optical sensors [13] This waveguide technology is based on a combination of (stoichiometric) silicon nitride (SiNx ) Si3 N4 as waveguide layers, filled by and encapsulated with silica (SiO2 ) as cladding layers on a silicon wafer. The operation wavelength range spans from visible to the mid infrared, with very low loss The integration with these active building blocks requires a hybrid or heterogeneous approach with separately fabricated InP or Silicon platform chips. Whereas SOI provides all the active building blocks (except the optical source), such as waveguides and waveguide based blocks, modulators and detectors, up to the date silicon nitride generic MPW processes offer only passive optical waveguides, and just thermo-optic tuners as phase shifters.
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