Silicon Nitride Passivation of Silicon Nanowires Solar Cell

Abstract

Vertical aligned silicon nanowires were synthesized using chemical etching of silicon wafer. Influence of a silicon nitride layer on the top of the silicon nanowires solar cell has been investigated. The optical properties of a Si NWs array with and without silicon nitride passivation layer are examined in terms of optical reflection property. In the presence of silicon nitride layer, 1% reflection ratio in the spectral range (250-1000nm) is achieved. In addition, the solar cell characteristics have been significantly improved, which exhibits high short circuit current as well high efficiency. Based on the current-voltage measurements and morphology results, we show that the silicon nitride layer can passivate the defects generated by wet etching processes.