Silicon Nitride Molecular Layer Deposition Process Development using Dichlorosilane and Ammonia

Abstract

Alternate processing of Dichlorosilane (DCS) and Ammonia (NH3) were used in a mini-batch furnace to deposit thin layers of silicon nitride (SiN). Applications for conformal, thin SiN films in advanced Semiconductor device fabrication are identified in literature and ITRS. Advances in furnace capabilities that enable SiN with Molecular Layer Deposition (MLD) properties are described. The MLD characteristics of SiN deposition as temperatures reduce below 520C are demonstrated through experimental results and theoretically supported by interpretation of models of Chemical Vapor Deposition (CVD) DCS:NH3 SiN.