Abstract
Silicon nitride (SiN) has emerged as a key platform for integrated nonlinear photonics by leveraging its excellent optical properties and high fabrication maturity. SiN nonlinear integrated devices can provide efficiency, bandwidth and practicality. Here we show their exceptional performances for Kerr comb generation and frequency conversion. We also show how by inducing the intrinsically lacking 2nd order nonlinearity we can bring new nonlinear functionalities to the platform.
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