Abstract
It is demonstrated that CVD Si-nitride films as transparent dielectric satisfy all requirements for achieving MIS/IL solar cells with high efficiency and long term stability. Deposited on silicon by the SiH 4/NH 3 reaction at temperatures lower than usual (between 600° and 650°C) fixed positive interface charge densities Q N / q up to 7 × 10 12 cm −2 with excellent stability have been obtained. Utilizing the Si-nitride charge storage effect, the highest known Q N / q values (> 10 13 cm −2) combined with low values of N it have been achieved. The charge distribution is discussed and an energy band diagram modified according to new analytical results is presented. MIS/IL solar cells with AM1 efficiencies of 15% (active area) and high UV sensitivity have been obtained.
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