Abstract
Depositing a barrier film for moisture protection without damage at a low temperature is one of the most important steps for organic-based electronic devices. In this study, the authors investigated depositing thin, high-quality SiNx film on organic-based electronic devices, specifically, very high-frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source with a gas mixture of NH3/SiH4 at a low temperature of 80 °C. The thin deposited SiNx film exhibited excellent properties in the stoichiometry, chemical bonding, stress, and step coverage. Thin film quality and plasma damage were investigated by the water vapor transmission rate (WVTR) and by electrical characteristics of organic light-emitting diode (OLED) devices deposited with SiNx, respectively. The thin deposited SiNx film exhibited a low WVTR of 4.39 × 10−4 g (m2 · day)−1 for a single thin (430 nm thick) film SiNx and the electrical characteristics of OLED devices before and after the thin SiNx film deposition on the devices did not change, which indicated no electrical damage during the deposition of SiNx on the OLED device.
Highlights
Depositing a barrier film for moisture protection without damage at a low temperature is one of the most important steps for organic-based electronic devices
By electrical characteristics of organic light-emitting diode (OLED) devices deposited with SiNx, respectively
The thin deposited SiNx film exhibited a low water vapor transmission rate (WVTR) of 4.39 × 10−4 g (m2 · day)−1 for a single thin (430 nm thick) film SiNx and the electrical characteristics of OLED devices before and after the thin SiNx film deposition on the devices did not change, which indicated no electrical damage during the deposition of SiNx on the OLED device
Summary
Depositing a barrier film for moisture protection without damage at a low temperature is one of the most important steps for organic-based electronic devices. The most common method for preventing the moisture and oxygen was encapsulation using glass or metal lids This method is not suitable for large areas or for flexible or transparent organic devices[4,5,6]. Many researchers have investigated depositing low-temperature Si3N4 using physical vapor deposition (PVD), atomic layer deposition (ALD), and plasma-enhanced chemical vapor deposition (PECVD)[11,12,13]. Among these methods, PECVD has attracted considerable attention because of its high throughput at low temperatures and good adhesion on flexible substrates. Conventional PECVD has damage issues caused by ion bombardment during the deposition as well as issues related to the porosity and unconformal step coverage on patterned substrates[14,15]
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