Abstract
Integrated mid-infrared waveguides and directional couplers are demonstrated on silicon nitride (SiN) thin films by low-pressure chemical vapor deposition. The prepared SiN film has a broad spectral transparency from visible up to mid-infrared (mid-IR). The SiN waveguide shows a dominant fundamental mode with an optical loss of 2.1 dB/cm at λ = 3.7 μm. In addition, we demonstrate an efficient SiN directional coupler with an 8 dB extinction ratio upon wavelength sweep between λ = 3.55 μm to λ = 3.75 μm. With the inherent advantage of complementary metal-oxide-semiconductor (CMOS) compatibility, our SiN platform paves the way to create sophisticated photonic circuits that are desired for chip-scale mid-IR biochemical sensors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
