Abstract
We have prepared Si 1− x N x (SiN) and SiO 2 films at a substrate temperature of 100° C by the simultaneous use of a microwave ion source and an ICB system. The microwave ion source system was used to produce low-energy (100–500 eV) nitrogen or oxygen ion beams in a high vacuum of about 10 −5 Torr. By utilizing nitrogen ions, transparent Si 1− x N x (SiN) films with ideal stoichiometr could be obtained. These films were thermally and chemically stable. The SiO 2 films prepared by using oxygen ions showed a refractive index of 1.46. Stoichiometric SiO 2 films were obtained. The bonding between silicon and oxygen atoms in the SiO 2 films could be enhanced by using both ionized Si clusters and oxygen ions. The SiO 2 films as well as Si 1− x N x (SiN) films have an electr resistivity higher than 10 14 Ω cm. The breakdown voltage for these films was larger than 2 × 10 6 V/cm.
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