Abstract
Reactive ion etching (RIE) is an anisotropic etching process which has been used to etch silicon oxide, silicon nitride and polysilicon films. Due to the nonuniformities of etch rate and film thickness, overetching is often required to ensure the complete removal of these films. Previous X-ray photoemission spectroscopy (XPS), He ion channeling, nuclear reaction profiling, Raman scattering and ellipsometry studies have indicated the presence of a fluorocarbon film (30-40 Å) on Si, a heavily disordered layer (∼30 Å) and the etching gas related impurity implantation region (∼250 Å) underneath the Si surface caused by CF4/x% H2 (0≤x≤40) reactive ion etching. In the present investigation, high resolution electron microscopy (HREM) is used to study the structures and distribution of lattice defects in the heavily disordered region. Particular attention is paid to the effects of overetch time and hydrogen addition to CF4 etching gas on Si near-surface damage structures.
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