Abstract
The aim of our work is to fabricate the silicon nanowire (SiNW) sensor used for gas detection by a novel SU8/SiO 2/PMMA trilayer nanoimprint technique instead of electron beam lithography (EBL).The SiNW sensor fabricated in our experiment is based on the silicon on insulator (SOI) substrate which is doped by boron with a dopant concentration of 8 × 10 17 cm −3. Two nanowire sensors with different linewidths as well as a thin-film device were fabricated for comparison. The fabricated devices were then used for detecting 250 ppm NO 2 and 250 ppm NH 3. The results show a promising enhanced sensitivity especially for the narrower device.
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