Abstract
Silicon nanowires (SiNWs) fabricated by MEMS technology and its DC response to antigen (HBsAg) was demonstrated in this paper. Anisotropic self-stop etching was employed to ensure low cost batch production. Electrical characterization revealed that, field effect of such device, with SiNWs' width and thickness in the order of 10 nm, guaranteed linear resistance modulation in a wide range, which made it a promising candidate for high sensitivity biochemical detection. Antigen (HBsAg) detection experiments presented that the sensitivity of the sensor exhibited an obvious dependence upon the length of SiNWs, which indicated a new way to improve the performance of such a kind of biosensor.
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