Abstract
Abstract: As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry and academia. To understand device physics in depth and to assess the performance limits of SNWTs, simulation is becoming increasingly important. The objectives of this paper are to assess the performance of SNWTs. A nano device simulator called fettoy was utilized for this purpose. The various output parameters analyzed were Quantum capacitance vs. gate voltage, Drain current vs. gate voltage, drain current vs. drain voltage, Drain induced barrier lowering, Threshold swing, Carrier injection velocity, on current, off current, Output conductance, Transconductance and Voltage gain for variation in input parameters like Dielectric materials, Thickness of dielectric material, Diameter of silicon nanowire and Gate Control Parameter. Also the effect of temperature was also studied.
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