Abstract
Abstract—The results of investigating the spectral characteristics of reflection from silicon nanopillar (Si NP) microarrays in the wavelength region from 400 to 1100 nm are presented. The Si nanopillars are formed by electron lithography on a negative resist with subsequent reactive ion etching. The Si nanopillars are etched through a resist mask and SiO2 100 nm thick. In the spectra of reflection from nanopillar microarrays, minima are observed, the position of which depends strongly on the Si nanopillar diameter.
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