Abstract
In this work, we present the results of modification of absorption band gap of Silicon nanoclusters (Si-nc) prepared by ion beam mixing on pre-irradiated fused silica. 30 keV Ar+ ions at fluences of 5 x 10(16) to 4 x 10(17) cm(-2) were used to create defects in fused silica glass before introducing Si atoms in the substrate. Si was introduced in the substrates by ion beam mixing using 30 keV Ar+ ions at fluence 1 x 10(17) cm(-2). From UV-Vis absorption spectra, band-gap of Si-nc has been determined for samples prepared at different ion beam-mixing parameters. The absorption edge shifts towards higher energies and size of the silicon nanoclusters decreases with an increase in ion beam fluence used for pre-mixing irradiation.
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