Abstract
A novel 2-bit nano-silicon based non-volatile memory is proposed to double memory density. The thin film structure exhibits two conduction states (ON and OFF) at different voltages and has a cost-effective structure. The structure utilizes the good electrical properties of fluorinated SiO2 thin films, together with the bi-stable properties conferred by the nano-silicon particles therein embedded. A polymeric layer of 8-hydroxyquinoline aluminum salt (Alq3) further deposited on the top of the nano-particle layer through chemical evaporation and a silver paste contact determines the final structure. The positive 0–15V scan reveals two discontinuities with an ON/OFF ratio of 104–105 (2–4V) and OFF/ON of 103 (12.5–13.0V). The reverse scan displays again two distinct thresholds, range of 10.5–11.0V (ON/OFF ratio 10−3), respectively, 0.5V (OFF/ON ratio 10−5–10−4).
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