Abstract
The requirement of a high-speed silicon photonic modulator is to perform high speed efficient photonic modulation. The proposed PIPN phase shifter of length 2. 5mm obtained a high modulation efficiency of 1 V.cm. The proposed phase shifter in a travelling wave electrode unbalanced silicon Mach Zehnder modulator achieved a 6.5 dB extinction ratio and 3. 70× 1$0^{-5}$ bit error rate at 70 Gbps. The travelling wave electrode is used to attain a strong coupling of RF and optic mode. The energy required to transmit the bit is calculated as 1.97 $\mathrm{p}\mathrm{J}/\mathrm{b}\mathrm{i}\mathrm{t}$. The modulator is designed to meet the data centre futuristic demands and can also be used in other applications like optical switches, delay lines etc.
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