Silicon molecular beam epitaxy on arsenic-implanted and laser-processed silicon

Abstract

We report on the production of doped silicon layers buried under epitaxial undoped silicon layers, giving particular attention to the abruptness of the doped-undoped silicon interface. Arsenic-implanted silicon is both annealed and atomically cleaned using pulsed laser irradiation. Surface cleanliness and surface order are checked with Auger electron spectroscopy and low energy electron diffraction respectively. Molecular beam epitaxy is done with a substrate temperature between 300 and 600 °C, resulting in an epitaxial silicon layer of typically 100 nm. Rutherford backscattering plus channeling show that the arsenic concentration drops abruptly at the substrate-epitaxy interface and that the epitaxial layer is of good crystal quality.