Abstract
This work presents results of silicon field emission devices fabrication from HI-PS technology. A dedicated system based on virtual instrumentation was developed to characterize samples electrically. From this system, it was possible to extract I-V curves and to analyze the behavior of devices related to the electrical emitting field obtained for each one. Si microtips arrays were compared by extracting the field enhancement factor g from the curves and applying it as a quality parameter. The g factor differences between the samples (about 0.46 and 0.59) indicate a good improvement of emission characteristics of devices in comparison with Si planar samples.
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