Silicon microstrip detectors on 6″ technology

Abstract

The fabrication of microstrip detectors on 4″ high-resistivity wafers that allow for a maximum workable area of about 42 cm 2 has been well established. Using 6″ wafers the workable area increases up to 100 cm 2 (more than twice the area of a 4″ wafer) allowing a larger number of detectors to be processed at the same time on the same wafer resulting in a sizable reduction of cost. After a prototyping stage, the CDF silicon tracker upgrade is now receiving final production sensors from Micron Semiconductor Ltd. The performance of double-sided single-metal small stereo angle sensors for the CDF SVXII and ISL detectors has been studied. Results include probe station measurements and test beam results. The problems encountered from prototyping to the final devices are described. A brief overview of the response of the sensors to irradiation with γ-rays and p + up to a dose of 0.5 Mrad (well above the doses expected during Run II of the Tevatron) is included.