Abstract
ABSTRACTThe lattice temperature of silicon was measured during pulsed ruby laser annealing (-20 ns pulse, spot diameter ≥ 5 mm) using a classical time of flight method to determine the velocity distribution of Si atoms evaporated from the hot surface. The maximum of this Maxwell type distribution was used to calculate the temperature of the Si surface. The resulting lattice temperatures vary between 1200 and 2500 K for energy densities between 1.0 and 2.0 J/cm2 , i.e., Si is molten for energy densities ≥ 1.4 J/cm2 . This result clearly supports the strictly thermal annealing model [1] and contradicts the non-thermal-equilibrium model [2] as well as Raman measurements [3].
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