Abstract
The development of a process for the growth of epitaxial layers of silicon from the liquid phase by using tin as a solvent is reviewed. This technology has been found to have the following unique attributes: (i) low growth temperatures, (ii) complete conservation of silicon, (iii) complete suppression of autodoping, (iv) high minority carrier lifetime in the epitaxial layers and the substrates, and (v) the ability to obtain selective epitaxial growth with total absence of nucleation on oxide‐coated surfaces. The process has been applied towards the fabrication of power field‐controlled devices which utilize buried grids and solar cell structures which utilize the selective epitaxial growth for refilling grooves etched in substrates.
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